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Real-time control of AlN incorporation in epitaxial Hf1−Al N using high-flux, low-energy (10–40 eV) ion bombardment during reactive magnetron sputter deposition from a Hf0.7Al0.3 alloy target

Materials EngineeringMaterials ScienceAluminium NitrideReal-time ControlEngineeringApplied PhysicsHf0.7al0.3 Alloy TargetAln Incorporation