Properties of High Heat-Resistance µc-SiC_x:H Emitter Silicon HBT's

Abstract

Properties of µc-SiC x :H prepared by plasma CVD are studied with emphasis on microcrystallite growth and thermal stability. A small percentage of carbon added to µc-Si:H effectively suppresses crystalline-grain growth which degrades the wide-bandgap effect. As a result, the µc-SiC x :H-emitter HBT yields higher current gains than the µc-Si:H-emitter HBT over the entire current range measured. Greater heat-resistance properties are also observed. Accordingly, a current gain as high as 450 is maintained even after 450°C annealing.