Microstructural properties and atomic arrangements of GaN nanorods grown on Si (111) substrates by using hydride vapor phase epitaxy - Concepedia

Concepedia

Publication | Closed Access

Microstructural properties and atomic arrangements of GaN nanorods grown on Si (111) substrates by using hydride vapor phase epitaxy

12

Citations

23

References

2008

Year

K.H. Lee, Yongchai Kwon, S.Y. Ryu, Tae Won Kang, Jae-Hun Jung, D.U. Lee, T.W. Kim

Journal of Crystal Growth

Materials ScienceMicrostructural PropertiesEngineeringNanotechnologySurface ScienceApplied PhysicsGan NanorodsGan Power DeviceAtomic ArrangementsEpitaxial Growth

References

	Year	Citations

Page 1