Applied Physics Letters · 2003 · 353 citations · 7 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSpectroscopyOxide SemiconductorsPhotoelectron SpectroscopySemiconductor Device MaterialsSilicon MaterialsX-ray Photoelectron SpectroscopyX-ray SpectroscopyChemical State AnalysisChemical State MappingDielectric-semiconductor InterfacesHigh-resolution X-ray SpectroscopyInterface StructurePhoton EnergySynchrotron X-ray SpectroscopySynchrotron-based X-ray Photoelectron Spectroscopy
High-resolution x-ray photoelectron spectroscopy (XPS) at 6 keV photon energy has been realized utilizing high-flux-density x rays from the third generation high-energy synchrotron radiation facility, SPring-8. The method has been applied to analysis of high-k HfO2/interlayer/Si complementary metal–oxide–semiconductor gate-dielectric structures. With the high energy resolution and high throughput of our system, chemical-state differences were observed in the Si 1s, Hf 3d, and O 1s peaks for as-deposited and annealed samples. The results revealed that a SiOxNy interlayer is more effective in controlling the interface structure than SiO2. Our results show the wide applicability of high resolution XPS with hard x rays from a synchrotron source.
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