Postannealing Process for Low Temperature Processed Sol–Gel Zinc Tin Oxide Thin Film Transistors

Abstract

We fabricated zinc tin oxide (ZTO) thin film transistors (TFTs) using a stable ZTO sol–gel solution at a low annealing temperature of . To enhance transistor performance, the ZTO films were postannealed under vacuum and wet air consecutively. The vacuum and wet air postannealed ZTO TFTs exhibited high saturation mobilities , low subthreshold swing (0.38 V/dec), and high on–off current ratio . We analyzed the ZTO films before and after postannealing by X-ray photoelectron spectroscopy to explain the origin of the enhanced performance.