Influence of metal-ferroelectric contacts on the space charge formation in ferroelectric thin film capacitors

Abstract

We have studied the response speed characteristics of capacitor structures based on thin Ba 0.3 Sr 0.7 TiO 3 (BSTO) films with metal-ferroelectric contacts of various types formed under different conditions. It is established that threshold voltages exist for the appearance of a residual space charge in some structures. A comparative analysis of the technological features of contact formation and experimental data on the characteristics of samples leads to the conclusion that, by forming Pt-BSTO contacts in an oxygen-containing atmosphere, it is possible to suppress the injection of carriers into the ferroelectric film in the capacitor structure.