Sputter-Deposition of [111]-Axis Oriented Rhombohedral PZT Films and Their Dielectric, Ferroelectric and Pyroelectric Properties

Abstract

[111]-oriented PZT films have been successfully grown with good epitaxy onto epitaxial platinum film substrates by the rf-magnetron sputtering method using Pb enriched PZT(90/10) targets. The sputtering conditions for growing epitaxial films were investigated. Crystallographic identifications of the films were made by the X-ray and RHEED measurements. Dielectric, ferroelectric and pyroelectric properties of these films were measured. Pyroelectric coefficients at room temperature were determined as 45 and 3×10 -9 C/cm 2 K for epitaxial PZT films with poling and without poling treatments, respectively. Epitaxial PZT films sputtered on Pt/sapphire possess desirable properties for potential applications to pyroelectric devices.