Applied Physics Letters · 2007 · 27 citations · 22 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsLight-emitting DiodesOptoelectronic MaterialsOrganic SemiconductorsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor ReliabilityCarrier Transport In Organic SemiconductorsDegradationDegradation AnalysisElectrical PropertiesElectrical Properties AnalysisElectroluminescenceOrganic ElectronicsOrganic Light-emitting Diodes
The authors have demonstrated that the increase of electron injection barrier height between tris(8-hydroxyquinoline)aluminum (Alq3) and LiF∕Al cathode is one of the most critical parameters to determine the reliability of organic light-emitting diode with the typical structure of indium tin oxide/N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl) benzidine/Alq3∕LiF∕Al. The electrical properties of several devices (hole only, electron only, and integrated double-layered devices) have been measured in the function of operating time to analyze the bulk and interface property changes. Bulk properties of trap energy and mobility in an organic layer have been estimated by using trap-charge-limited currents and transient electroluminescence measurements.
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Organic Electroluminescent Devices
James R. Sheats, Homer Antoniadis, M. R. Hueschen et al. · Science · 1996 · 1.1K citations
Natural Sciences, Materials Engineering, Materials Science +14
Degradation Mechanism of Small Molecule-Based Organic Light-Emitting Devices
Hany Aziz, Zoran D. Popović, Nan‐Xing Hu et al. · Science · 1999 · 837 citations
Reliability and degradation of organic light emitting devices
P. E. Burrows, Vladimir Bulović, Stephen R. Forrest et al. · Applied Physics Letters · 1994 · 737 citations
Chung‐Chih Wu, Chih‐I Wu, J. C. Sturm et al. · Applied Physics Letters · 1997 · 713 citations