Current-controlled channel switching and magnetoresistance in an Fe3C island film supported on a Si substrate

Abstract

A film of magnetic Fe3C islands separated by nanochannels of graphite was prepared with pulsed laser deposition on a Si substrate with a native SiO2 surface. When the temperature is increased above 250 K the resistance suddenly drops because electron conduction switches from the film to the Si inversion layer underneath. The film shows a negative magnetoresistance. The inversion layer exhibits a large positive magnetoresistance. The transition to the low resistance channel can be reversed by applying a large measuring current, making possible current-controlled switching between two types of electron magnetotransport at room temperature.