Journal of Applied Physics · 2004 · 23 citations · 21 references
Natural SciencesMaterials EngineeringMaterials ScienceOptical MaterialsOptoelectronicsThin FilmsInfrared SpectroscopyMetalsOptical Properties Of MaterialsThin Film Optical PropertiesThin Film OxidationThin-film MaterialsMetal Thin FilmsMetallic Thin FilmsPhotochemical Redox ReactionsRedox Reactions In SolidsReflectanceSurface LayersThin-film Optoelectronic MaterialsWavelength Dependence
Interface reactions in WO3∕metal thin-film bilayered structures were examined for applications to optical recording materials. Decreases in the reflectance of the structures caused by temperature elevation were observed and were attributed to (i) coloration of the WO3 layers, and (ii) decreases in the reflectance of the metal layers resulting from redox reactions between the WO3 and the metals. The reflectance spectra of the structures before temperature elevation showed moderate wavelength dependence over a wide range, from the visible to the near infrared. Decreases in the reflectance due to temperature elevation occurred over a wide wavelength range. Examination of the WO3∕Al–Ti bilayered structures as potential optical disk memories revealed that the redox reactions occurred within submicrosecond time periods during irradiation with the recording laser. The results indicate that these structures possess promising properties for applications to optical recording materials that can be used over a wide wavelength range.
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Thermal conductivity of dielectric thin films
John C. Lambropoulos, Mark Jolly, Charles A. Amsden et al. · Journal of Applied Physics · 1989 · 162 citations
Natural Sciences, Materials Engineering, Materials Science +17
Photochromism in WO3 thin films
A. I. Gavrilyuk · Electrochimica Acta · 1999 · 109 citations
Natural Sciences, Materials Engineering, Materials Science +12