Real‐time investigations of selenization reactions in the system Cu–In–Al–Se

Abstract

Abstract In this article we present results of a detailed study of selenization reactions in the quaternary system Cu–In–Al–Se and of the binary subsystem aluminum–selenium. The investigation of solid‐state reactions involved in the formation of the compound semiconductor Cu(In,Al)Se 2 was performed using real‐time X‐ray diffraction (XRD) with a time resolution of 22.5 s while annealing an elemental layer stack of the metals covered with selenium. A temperature‐resolved phase analysis shows that the formation of the semiconductor takes place via metal‐selenides. Ex‐situ XRD measurements of the processed thin films show a phase segregation concerning the aluminum content of the formed chalcopyrite. Subsequent Rietveld‐refinement of real‐time measurements reveals a formation reaction of the quaternary semiconductor Cu(In,Al)Se 2 from the γ‐In 2 Se 3 related crystal structure of (Al,In) 2 Se 3 and Cu 2 Se as educts. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)