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The origin of the ∼274cm−1 additional Raman mode induced by the incorporation of N dopants and a feasible route to achieve p-type ZnO:N thin films

Materials ScienceN DopantsEngineeringNanotechnologyOxide ElectronicsApplied PhysicsThin Film Process TechnologyThin FilmsFeasible RouteThin Film ProcessingP-type Zno