Single Electron Memory Devices Based on Plasma-Derived Silicon Nanocrystals

Abstract

Single electron nonvolatile memory devices are fabricated using a narrow and short channel transistor and silicon nanocrystals as a floating gate. The silicon nanocrystals are deposited by very-high-frequency plasma processing. This deposition technique offers not only control of the dot size but also promises precise control of the tunnel oxide thickness. A single electron charging effect is observed for such devices at 77 K.