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Nonuniversal Conductance Quantization in Quantum Wires
450
Citations
11
References
1996
Year
Wide-bandgap SemiconductorCategoryquantum ElectronicsEngineeringNonuniversal Conductance QuantizationSemiconductorsQuantum ComputingQuantum MaterialsQuantum TheoryQuantum EntanglementCharge Carrier TransportLow Temperature ConductanceQuantum ScienceConductance StepsPhysicsQuantum DeviceCategoryiii-v SemiconductorNatural SciencesApplied PhysicsCondensed Matter PhysicsConductance Plateaus
We have measured the transport properties of high-quality quantum wires fabricated in GaAs-AlGaAs by using cleaved edge overgrowth. The low temperature conductance is quantized as the electron density in the wire is varied. While the values of the conductance plateaus are reproducible, they deviate from multiples of the universal value of ${2e}^{2}/h$ by as much as 25%. As the temperature or dc bias increases the conductance steps approach the universal value. Several aspects of the data can be explained qualitatively using Luttinger liquid theory although there remain major inconsistencies with such an interpretation.
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