Publication | Open Access
Chemisorption geometry on cleaved III-V surfaces: Cl on GaAs, GaSb, and InSb
68
Citations
12
References
1979
Year
Cleaved Iii-v SurfacesEngineeringChemistrySemiconductorsIi-vi SemiconductorChemisorption GeometryElectron SpectroscopyCl AdatomsSurface ReconstructionPhysicsTight-binding CalculationsChemisorptionPhysical ChemistryPhotoelectric MeasurementQuantum ChemistrySurface CharacterizationNatural SciencesSurface AnalysisSurface ScienceApplied PhysicsLocal DensityChemical Vapor Deposition
Experimental angle-integrated photoemission curves taken on Cl-covered (110) surfaces of GaAs, GaSb, and InSb have been compared to tight-binding calculations of the local density of states. The results clearly demonstrate that the Cl adatoms are bound to the anion substrate atoms rather than to the cation substrate atoms. Some qualitative information is also provided on surface relaxation and on chemisorption bond lengths.
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