Publication | Closed Access
Hard photon yields from (70–240) GeV electrons incident near axial directions on Si, Ge and W single crystals with a large thickness variation
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References
1990
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Semiconductor TechnologyPhotonicsIi-vi SemiconductorEngineeringPhysicsCrystalline DefectsW Single CrystalsApplied PhysicsLarge Thickness VariationHard Photon YieldsPhotonic Device
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