Publication | Closed Access
Selective etching characteristics of HF for Al <sub>x</sub> Ga <sub>1-x</sub> As/GaAs
52
Citations
3
References
1985
Year
The first detailed report of the selective etching characteristics of an AlxGa1-xAs/GaAs DH wafer (x≥0.4) in an HF system is given. Selective etching at a cleaved facet and a calculation of the energy of activation are included.
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