An InP MIS diode

Abstract

Wet chemical anodic oxidation of InP in a 1% by weight solution of sodium salicylate in ethyl alcohol is shown to result in the growth of a high-quality dielectric layer. Resistivities in excess of 1013 Ω cm at room temperature have been realized with breakdown fields ∼106 V/cm. Apparent surface state densities as determined from 1-MHz capacitance-voltage plots are in the range 3–4×1011 cm−2 eV−1 over a large portion of the band gap.