Impact of post-deposition-annealing on the electrical characteristics of HfOxNy gate dielectric on Ge substrate

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

S.-H. Lo, D. A. Buchanan, W. Wang · IEEE Electron Device Letters · 1997 · 812 citations

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Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy

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Interfacial characteristics of HfO2 grown on nitrided Ge (100) substrates by atomic-layer deposition

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Ultrathin<tex>$hbox Al_2hbox O_3$</tex>and<tex>$hboxHfO_2$</tex>Gate Dielectrics on Surface-Nitrided Ge

Jindi Chen, N.A. Bojarczuk, Huiling Shang et al. · IEEE Transactions on Electron Devices · 2004 · 128 citations

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