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Impact of post-deposition-annealing on the electrical characteristics of HfOxNy gate dielectric on Ge substrate

Materials EngineeringElectrical CharacteristicsElectrical EngineeringSemiconductor DeviceEngineeringGe SubstrateNanoelectronicsBias Temperature InstabilityApplied PhysicsSemiconductor Device FabricationElectronic PackagingSilicon On InsulatorMicroelectronicsHfoxny Gate DielectricElectrical Insulation