Electronic and vibrational spectra of InP quantum dots formed by sequential ion implantation

Abstract

Sequential ion implantation of indium and phosphorus into silica combined with controlled thermal annealing has proven to be a novel and effective technique to fabricate InP quantum dots in dielectric hosts. This technique has been applied to synthesize other III–V and II–VI quantum dots. Due to the unique bimodal distribution of the indium in a silica host and a stoichiometric mismatch between the indium and phosphorus concentration profiles, it is believed that two different-sized InP quantum dots were fabricated. More importantly, we have shown that the infrared reflectance technique is a very effective method to identify the species in the dielectric host and is also a powerful tool to investigate surface phonon modes.