Ga₂O₃Films for Photoelectrochemical Hydrogen Generation

Abstract

The authors report the use of RF sputtered Ga2O3 films prepared on SiO2/Si template to serve as the photoelectrode for photoelectrochemical (PEC) water splitting. It was found that photocurrent observed from the 900°C-annealed Ga2O3 film was more than 3 orders of magnitude larger than its dark current at zero bias voltage. It was also found that no decomposition and/or corrosion occurred on the surface of the 900°C-annealed Ga2O3 film. This suggests that Ga2O3 film has the potential to serve as a reliable photocathode for hydrogen generation.