Electrical Properties of Thick Epitaxial Silicon Films Deposited at High Rates and Low Temperatures by Mesoplasma Chemical Vapor Deposition

Abstract

The deposition of homoepitaxial silicon thick films at a rate of ∼33 nm/s and a substrate temperature of 360 °C was achieved by mesoplasma chemical vapor deposition. The deposition rate increased linearly with silane partial pressure with no significant effect from the substrate temperature. An average Hall mobility of ∼270 cm2 V-1 s-1 was obtained irrespective of both the deposition rate and the substrate temperature. Epitaxy at such a high rate and low temperature under a precursor-transport-limited condition was thought to be due to the high transport rate of thermally activated atoms/clusters, together with high atomic hydrogen flux, which are unique characteristics of the mesoplasma condition.