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Vacancy defect and carrier distributions in the high mobility electron gas formed at ion-irradiated SrTiO3 surfaces
29
Citations
9
References
2010
Year
EngineeringPositron Annihilation SpectroscopySrtio3 SurfacesCarrier DistributionsVacuum DeviceElectron SpectroscopyNanoelectronicsIon EmissionMaterials SciencePhysicsOxide ElectronicsIntrinsic ImpurityDefect FormationIon-irradiated Srtio3 SurfacesSurface CharacterizationAdvanced Characterization ToolsSurface AnalysisSurface ScienceApplied PhysicsCondensed Matter PhysicsVacancy Defect
Using a combination of advanced characterization tools (positron annihilation spectroscopy, conductive-tip atomic force microscopy, and high-field magnetotransport), we have studied the extension, origin and properties of the high mobility electron gas (HMEG) generated by etching the SrTiO3 surfaces with Ar+ ions. Contrary to previous assumptions, we show that this HMEG is not confined to nanometric thickness but extends to a few micrometer from the surface. We discuss this unanticipated large spatial extension in terms of the striking large diffusion of oxygen vacancy-related defects.
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