Envelope-function matching conditions for GaAs/(Al,Ga)As heterojunctions

Abstract

By comparing model calculations and experimental results from photoluminescence excitation spectra, we determine that for GaAs/(Al,Ga)As quantum wells the appropriate matching conditions are the continuity of the envelope function (F) and ${m}^{\mathrm{\ensuremath{-}}1}$dF/dz across the interface.