High-temperature electron and hole mobility in CdTe

Abstract

We have developed a novel technology for forming high-temperature stable ohmic contacts on CdTe, and we have measured the Hall mobilities of electrons at temperatures between 300–1300 K and holes between 225–600 K. The temperature interval also covers the region 300–600 K, where no data have yet been presented. The measured mobilities agree very well with theoretical calculations.