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Excitons in ZnSe-ZnS strained-layer superlattices
19
Citations
13
References
1989
Year
Materials ScienceQuantum ScienceIi-vi SemiconductorZnse-zns Strained-layer SuperlatticesEngineeringPhysicsTopological HeterostructuresExciton EffectsQuantum DeviceApplied PhysicsQuantum MaterialsCondensed Matter PhysicsSuperconductivityZnse-zns SuperlatticesOptoelectronics
We present a theoretical study of excitons in ZnSe-ZnS strained-layer superlattices within an effective-mass approximation. A simple description of excitons in a quantum well is adopted because of a good agreement of the calculated subband energy of the superlattice with that of the quantum well. We demonstrate the exciton effects on the optical gap of ZnSe-ZnS superlattices by a variational method. The calculated optical gap exhibits inverse-square dependence on the well width, which is consistent with recent experimental data.
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