Publication | Closed Access
Fabrication and Characterization of Molecular Beam Epitaxy Grown Thin-Film GaAs Waveguides for Mid-Infrared Evanescent Field Chemical Sensing
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Citations
22
References
2006
Year
Photonic DevicePhotonicsPhotonic SensorEngineeringOptical PropertiesCompound SemiconductorOptical SensorApplied PhysicsThin-film Gaas WaveguidesPlanar Waveguide SensorGuided-wave OpticChemistryMolecular Beam EpitaxyEpitaxial GrowthBroad Mir BandOptoelectronicsOptical SensorsNanophotonics
Thin-film GaAs waveguides were designed and fabricated by molecular beam epitaxy for use in mid-infrared (MIR) evanescent field liquid sensing. Waveguides were designed to facilitate the propagation of a single mode at a wavelength of 10.3 microm emitted from a distributed feedback quantum cascade laser, which overlaps with molecular selective absorption features of acetic anhydride. The characterization of the waveguides shows transmission across a broad MIR band. Evanescent field absorption measurements indicate a significant sensitivity enhancement in contrast to multimode planar silver halide waveguides.
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