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1.3 μm InGaAsP/InP multiquantum-well lasers grown by vapour-phase epitaxy
31
Citations
5
References
1983
Year
PhotonicsElectrical EngineeringEngineeringVapour-phase EpitaxyLaser ScienceSemiconductor LasersOptoelectronic MaterialsApplied PhysicsLaser ApplicationsDouble-growth Chamber ReactorLaser MaterialOptoelectronic DevicesMolecular Beam EpitaxyEpitaxial GrowthBroad-area StructureOptoelectronicsCompound SemiconductorMultilayer Structure
Low-threshold InGaAsP/InP multiquantum-well lasers emitting at 1.3 μm have been successfully fabricated. The multilayer structure has been grown by hydride transport vapour-phase epitaxy with a double-growth chamber reactor. Broad-area structure threshold current density as low as 1.2 kA/cm2 has been obtained.
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