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Enhancement of ferromagnetic ordering in dielectric BaFe1−xZrxO3−δ (x=0.5–0.8) single-crystal films by pulsed laser-beam deposition
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References
2005
Year
Magnetic PropertiesEngineeringMagnetic ResonanceMagnetoresistanceMagnetismMultiferroicsFerroelectric ApplicationSuperconductivityMaterials ScienceSaturation MagnetizationFerromagnetic OrderingPhysicsZr SubstitutionDielectric Bafe1−xzrxo3−δMagnetic MaterialSpintronicsFerromagnetismDielectric PropertiesNatural SciencesCondensed Matter PhysicsApplied PhysicsFerroelectric MaterialsPulsed Laser-beam DepositionThin Films
The effect of Zr substitution on the magnetic and dielectric properties of the BaFe1−xZrxO3−δ epitaxial grown films was investigated. The Zr substitution significantly improved the dielectric properties of the films. In addition to this, the saturation magnetization for the x=0.7 sample was determined to be 0.98μB∕Fen+, in contrast to 0.09μB∕Fen+ for the x=0.5 sample. This implies that the magnetic ordering for the x=0.7 sample has been greatly enhanced, possibly due to the ferromagnetic spin alignment of Fe ions. We will discuss the magnetization behavior in conjunction with the valence state of the Fe ions in the samples.
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