Publication | Closed Access
Influence of Shell Thickness on the Performance of Light‐Emitting Devices Based on CdSe/Zn<sub>1‐X</sub>Cd<sub>X</sub>S Core/Shell Heterostructured Quantum Dots
297
Citations
28
References
2014
Year
EngineeringColloidal NanocrystalsCdse Core RadiusOptoelectronic DevicesSemiconductor NanostructuresSemiconductorsIi-vi SemiconductorShell ThicknessesElectronic DevicesPhotodetectorsNanoelectronicsQuantum DotsCompound SemiconductorMaterials SciencePhotoluminescencePhysicsOptoelectronic MaterialsShell ThicknessSolid-state LightingApplied PhysicsLight‐emitting DevicesOptoelectronics
CdSe/Zn1-X CdX S core/shell heterostructured quantum dots (QDs) with varying shell thicknesses are studied as the active material in a series of electroluminescent devices. "Giant" CdSe/Zn1-X CdX S QDs (e.g., CdSe core radius of 2 nm and Zn1-X CdX S shell thickness of 6.3 nm) demonstrate a high device efficiency (peak EQE = 7.4%) and a record-high brightness (>100 000 cd m(-2) ) of deep-red emission, along with improved device stability.
| Year | Citations | |
|---|---|---|
Page 1
Page 1