Influence of Shell Thickness on the Performance of Light‐Emitting Devices Based on CdSe/Zn<sub>1‐X</sub>Cd<sub>X</sub>S Core/Shell Heterostructured Quantum Dots

Jaehoon Lim, Byeong Guk Jeong, Myeongjin Park, Jai Kyeong Kim, Jeffrey M. Pietryga, Young‐Shin Park, Victor I. Klimov, Changhee Lee, Doh C. Lee, Wan Ki Bae

Advanced Materials · 2014 · 303 citations · 28 references

Concepts

Abstract

CdSe/Zn1-X CdX S core/shell heterostructured quantum dots (QDs) with varying shell thicknesses are studied as the active material in a series of electroluminescent devices. "Giant" CdSe/Zn1-X CdX S QDs (e.g., CdSe core radius of 2 nm and Zn1-X CdX S shell thickness of 6.3 nm) demonstrate a high device efficiency (peak EQE = 7.4%) and a record-high brightness (>100 000 cd m(-2) ) of deep-red emission, along with improved device stability.

References

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