Influence of dislocations on electrical conductivity of CdTe

Abstract

Simultaneous measurements of electrical conductivity and flow stress have been made on p- and n-type CdTe single crystals deformed in compression at room temperature. Observed changes in conductivity always correspond to a shift of the Fermi energy towards the conduction band and are consistent with the creation of an excess of dislocation donors. An energy-band diagram for the native point-defect states and dislocation states in CdTe is formulated based upon observed electrical, optical, and mechanical behavior.