Deep Levels Associated with Nitrogen in Silicon

Abstract

Two deep levels at E c -0.19 eV and E c -0.28 eV are found in nitrogen-doped silicon, in which nitrogen is doped during crystal growth by the float-zone method. The E c -0.19 eV level has an electron capture cross section of 8×10 -17 cm 2 and the E c -0.28 eV level has that of 5×10 -16 cm 2 . The concentrations of the former and latter levels are about 0.1 and 0.01% of the doped nitrogen concentration (∼10 15 cm -3 ), respectively.