Publication | Closed Access
Observation of Chiral Luttinger Behavior in Electron Tunneling into Fractional Quantum Hall Edges
356
Citations
14
References
1996
Year
Categoryquantum ElectronicsQuantum ScienceElectrical EngineeringEngineeringTunneling MicroscopyPhysicsPower LawTunneling ConductanceCondensed Matter PhysicsQuantum MaterialsApplied PhysicsDisordered Quantum SystemTopological Quantum StateElectron TunnelingTopological HeterostructuresChiral Luttinger Behavior
We measure the tunneling conductance ( $G$) and current-voltage ( $I\ensuremath{-}V$) characteristics for electron tunneling from a bulk doped-GaAs normal metal into the abrupt edge of a fractional quantum Hall effect. We observe clear power law behavior for both the $I\ensuremath{-}V$ relationship and the conductance versus temperature. For tunneling into the $\ensuremath{\nu}\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}1/3$ edge the power law persists for one decade in $V$ ( $T$), and 2.7 (1.7) decades in $I$ ( $G$). This strongly indicates the 1/3 edge behaves like a chiral Luttinger liquid. In contrast, the $\ensuremath{\nu}\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}1$ edge is essentially linear, while the 2/3 edge is slightly nonlinear.
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