Physical Review Letters · 1996 · 367 citations · 14 references
Natural SciencesElectrical EngineeringPhysicsCondensed Matter PhysicsQuantum MechanicsSemiconductor MaterialsElectronic Band StructureIii-v SemiconductorsMetal-semiconductor ContactsQuantum Hall PhysicsQuantum TunnelingSemiconductor PhysicsChiral Luttinger LiquidsElectron TunnelingFractional Quantum Hall EffectHall EffectQuantum Tunneling EffectsTunneling CurrentTunneling In SemiconductorsTunneling Phenomena
We measure the tunneling conductance ( $G$) and current-voltage ( $I\ensuremath{-}V$) characteristics for electron tunneling from a bulk doped-GaAs normal metal into the abrupt edge of a fractional quantum Hall effect. We observe clear power law behavior for both the $I\ensuremath{-}V$ relationship and the conductance versus temperature. For tunneling into the $\ensuremath{\nu}\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}1/3$ edge the power law persists for one decade in $V$ ( $T$), and 2.7 (1.7) decades in $I$ ( $G$). This strongly indicates the 1/3 edge behaves like a chiral Luttinger liquid. In contrast, the $\ensuremath{\nu}\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}1$ edge is essentially linear, while the 2/3 edge is slightly nonlinear.
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F. D. M. Haldane · Journal of Physics C Solid State Physics · 1981 · 2.5K citations
Transport in a one-channel Luttinger liquid
C. L. Kane, Matthew P. A. Fisher · Physical Review Letters · 1992 · 1.1K citations