Publication | Closed Access
Transient Topographies of Ion Patterned Si(111)
61
Citations
24
References
2005
Year
Materials ScienceIon Patterned SiIon ImplantationEngineeringPhysicsMinimal ModelNanotechnologyNanoelectronicsSurface ScienceApplied PhysicsAtomic PhysicsNanoscale ModelingSemiconductor Device FabricationCurvature-dependent SputteringSputter PatterningSilicon On InsulatorMicroelectronicsIon Emission
The surface of high fluence ion-sputtered Si(111) was found to exhibit a rich variety of transient one- and two-dimensional topographies that may be exploited as tunable self-organized arrays of nanostructures. Such transient effects are only partially described by analytical models of sputter patterning. However, a discrete atom kinetic Monte Carlo simulation model incorporating curvature-dependent sputtering and surface diffusion reproduces many aspects of the transient morphological evolution, and clarifies the minimal model of sputter patterning.
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