Study of the effect of manganese impurities on dielectric characteristics of BSTO films

Abstract

Capacitance voltage and current voltage characteristics of BSTO ferroelectric films containing a manganese dioxide impurity (∼1.5–2 mol%) are compared to those of impurity-free samples. It is shown that in Mn-doped samples tan δ drops to 10−3, and the dependence of tan δ on the applied voltage changes as well. IVCs of these samples are strictly ohmic and do not show a nonlinearity at high voltages. A mechanism is proposed of the effect of Mn on the charge state of the defects comprising oxygen vacancies in BSTO films.