Publication | Closed Access
Low polarisation sensitivity electroabsorption modulators for 160 Gbit/s networks
21
Citations
2
References
1997
Year
Low-power ElectronicsGbit/s Otdm SystemsElectrical EngineeringSemiconductor DeviceEngineeringGbit/s NetworksNanoelectronicsElectronic EngineeringMixed-signal Integrated CircuitApplied PhysicsBuried Heterostructure DesignMicroelectronicsOptoelectronicsElectromagnetic CompatibilityElectronic Circuit
Packaged low polarisation sensitivity InGaAs/InAlAs MQW electroabsorption modulators employing a novel ridged deeply etched buried heterostructure design are described. The feasibility of using them in 160 Gbit/s OTDM systems is experimentally assessed.
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