NMR Study on Heavily Doped Silicon. II

Abstract

Spin echo spectra, Knight shift and spin-lattice relaxation time are measured on 31 P in silicon crystals with phosphorus concentrations ranging from 4.5×10 18 cm -3 to 9.6×10 19 cm -3 over a temperature region from 4.2 K to 0.4 K. The shift and width of 31 P line is atrributed to the inhomogeneous electron contact field. The results together with those of 29 Si (J. Phys. Soc. Japan 36 (1974) 1377) support the Mott transition mechanism of metal-non metal transition and allow to interpret various properties of the metallic samples in terms of an electron gas with correlation.