Fabrication and Characterization of Planarized Carbon Nanotube Via Interconnects

Abstract

We fabricate planarized carbon nanotube (CNT) via interconnects using chemical mechanical polishing (CMP). The selective growth of CNT bundles in via holes and the filling of spin-on-glass into the space among the CNTs are performed, followed by a CMP process. The via resistance is reduced by post-CMP treatment and post-annealing due to the improvement in the top contact formation. The measured CNT via resistance is higher than the CNT bundle resistance estimated from the measured resistance of an individual CNT. This indicates that contact resistance is higher than the CNT resistance in the CNT via interconnect.