Excess Noise in Amorphous Selenium Avalanche Photodiodes

Abstract

Excess noise in amorphous Selenium avalanche photodiodes (a-Se APD) has been measured in a frequency range from 3 kHz to 30 kHz. The deduced excess noise factors, including dependences on photocurrent, frequency, applied electric field and the a-Se layer's thickness, agreed with McIntyre's theoretical values.