Low temperature growth of graphene film by microwave assisted surface wave plasma CVD for transparent electrode application

Abstract

Here, we report the synthesis of a graphene film on Cu foil by microwave assisted surface wave plasma chemical vapor deposition (MW-SWP-CVD) at a low pressure and temperature using a hydrocarbon gas. Raman spectroscopy and transmission electron microscopy (TEM) studies clearly show deposited carbon films that consist of few layer graphene sheets. Deposition of graphene films with a few layers structure was achieved at a temperature as low as 240 °C. In the nucleation and growth process, carbon radicals are formed with hydrogen termination in the surface wave plasma, which absorb continuously on the Cu surface to form sp2 carbon and eventually a graphene structure. The transparency and conductivity characteristics of the transferred graphene films show suitability for flexible electronics applications.