Kinetic Limits of Monolayer Growth on (001) Gaas by Organometallic Chemical-vapor Deposition

Abstract

Time, pressure, and temperature dependences of the optically determined surface coverage by Ga-containing species reveal that the kinetic limits to crystal growth in atmospheric-pressure organometallic chemical-vapor deposition on (001) GaAs are determined by reversible excluded-volume chemisorption and subsequent decomposition of trimethylgallium at surface lattice sites.