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Room-temperature “W” diode lasers emitting at λ≈4.0μm
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Citations
16
References
2004
Year
Pulsed ModePhotonicsTen Quantum-well PeriodsThreshold Current DensityEngineeringPhysicsSemiconductor LasersLaser SciencePhotoluminescenceApplied PhysicsLaser ApplicationsLaser ClassificationSurface-emitting LasersLaser ControlOptoelectronicsHigh-power LasersCompound Semiconductor
Type-II “W” diode lasers with ten quantum-well periods operated in pulsed mode to 315K, where the emission wavelength was 4.02μm. The devices with uncoated facets had a threshold current density of 145A∕cm2 and slope efficiency of 47mW∕A per facet at 78K, and displayed a characteristic temperature T0≈46K in the range 78–300K.
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