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Influence of manganese ions in the band gap of tin oxide nanoparticles: structure, microstructure and optical studies
125
Citations
41
References
2013
Year
Materials ScienceMagnetic PropertiesEngineeringBattery Electrode MaterialsNanomaterialsNanotechnologyAdvanced Electrode MaterialOxide ElectronicsJoint EffectBand Gap EnergyNanostructure SynthesisChemistryManganese IonsNanocrystalline MaterialTin Oxide NanoparticlesBand Gap
This paper presents the joint effect of strain- and doping-induced band gap change in Sn1−xMnxO (0 ≤ x ≤ 0.05) nanoparticles. In addition, an effort was made to understand the effect of Mn doping on the structural and optical properties of SnO2. X-ray diffraction analysis showed a tetragonal structure and the unit cell volume decreased slightly with Mn4+ content. The Mn:SnO2 are spherical shaped particles with a size ranging from 7.7 to 13.8 nm as calculated by transmission electron microscopy, Scherrer's formula and Willamson–Hall plot. X-ray photoelectron spectroscopy showed clear evidence for tetragonal coordinated high-spin Mn4+ ions occupying the lattice sites of Sn4+ in the SnO2 host. Electron energy loss spectroscopy further confirmed composition and oxidation states of Sn4+ and Mn4+ ions. Manganese doping increased the band gap of SnO2 from 4 eV to 4.40 eV with Mn4+ concentration. Variation in band gap energy was attributed to the increasing lattice strain with Mn content and the charge transfer transitions between Mn4+ ions and conduction/valence bands of SnO2. Three photoluminescence emission bands observed at 320, 360 and 380 nm, when excited at 250 nm, proved Mn:SnO2 to exhibit good optical emission and to have potential application in nanoscale optoelectronic devices.
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