Applied Physics Letters · 1997 · 84 citations · 11 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSpectroscopyElectronic SpectroscopyLuminescent MaterialsOptical Properties Of SemiconductorsOptoelectronic MaterialsRare-earth-doped MaterialsWide Band Gap SemiconductorsGallium Nitride (Gan) MaterialsImpuritiesLuminescence MechanismsMetalorganic Chemical Vapor DepositionNonradiative Energy TransferOptical AbsorptionPhotoluminescencePhotoluminescence Spectroscopy
Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies have been carried out at 6 K on the 1540 nm I13/24→I15/24 emission of Er3+ in Er-implanted films of GaN grown by metalorganic chemical vapor deposition. The PLE spectra exhibit several broad below-gap absorption bands, which excite three distinct site-selective Er3+ PL spectra. The excitation of two of the site-selective Er PL bands involves optical absorption by defects or background impurities, rather than direct intra-f shell absorption, with subsequent nonradiative transfer of the energy to nearby Er3+ luminescence centers. The characteristics of the PLE spectrum of the third site-selective PL band suggest that an exciton bound at an Er-related trap is involved in the excitation mechanism.
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1.54-μm photoluminescence from Er-implanted GaN and AlN
R. G. Wilson, Robert N. Schwartz, C. R. Abernathy et al. · Applied Physics Letters · 1994 · 200 citations
Natural Sciences, Materials Engineering, Materials Science +17
Electroluminescence from erbium and oxygen coimplanted GaN
John T. Torvik, R. J. Feuerstein, J. I. Pánkové et al. · Applied Physics Letters · 1996 · 67 citations