Effect of gate bias sweep rate on the electronic properties of ZnO nanowire field-effect transistors under different environments

Abstract

We report the effects of gate bias sweep rate on the electronic characteristics of ZnO nanowire field-effect transistors (FETs) under different environments. As the device was swept at slower gate bias sweep rates, the current decreased and threshold voltage shifted to a positive gate bias direction. These phenomena are attributed to increased adsorption of oxygen on the nanowire surface by the longer gate biasing time. Adsorbed oxygens capture electrons and cause a surface depletion in the nanowire channel. Different electrical trends were observed for ZnO nanowire FETs under different oxygen environments of ambient air, N2, and passivation.