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Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption

Wide-bandgap SemiconductorAluminium NitrideElectrical EngineeringEngineeringDesign ParametersApplied PhysicsAluminum Gallium NitrideGan Power DeviceMolecular Beam EpitaxyCategoryiii-v SemiconductorIntersubband AbsorptionOptoelectronics