High-Field Conductivity in Germanium and Silicon at Microwave Frequencies

Abstract

The effect on the conductivity of germanium and silicon samples of 2.85-kMc electric fields up to peak values of 10 000 v/cm was measured. These measurements differ from earlier ones in that: (1) the microwave field was in the form of progressive rather than standing waves, which made possible more accurate determination of the field strength in the sample, and (2) to determine whether any frequency effects occur at 2.85-kMc conductivity was measured at high dc fields on the same samples. From the average conductivity under microwave excitation the instantaneous conductivity was calculated and found to agree, within experimental error, with the dc conductivity, indicating that the conductivity can still follow the 2.85-kMc field at least up to peak fields of 10 000 v/cm.