Preparation and basic properties of PbTiO₃ferroelectric thin films and their device applications

Abstract

Abstract A series of technical data for preparing PbTiO3 ferroelectric thin films and their applications to some electronic devices have been presented. PbTiO3 thin films having considerably good ferroelectric properties have been obtained by rf sputtering or CVD. Maximum dielectric constant and remanent polarization are about 200 and 27μC/cm2, respectively. Several attempts to fabricate electronic devices such as nonvolatile memory, infrared sensor, ultrasonic sensor and low-threshold electroluminescent devices have been also carried out.