Growth of Ge–Si(111) epitaxial layers: intermixing, strain relaxation and island formation - Concepedia

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Growth of Ge–Si(111) epitaxial layers: intermixing, strain relaxation and island formation

73

Citations

41

References

1998

Year

Nunzio Motta, A. Sgarlata, Raffaella Calarco, Quang Lam Nguyen, J. Castro Cal, F. Patella, A. Balzarotti, M. De Crescenzi

Surface Science

Materials ScienceEngineeringStrain RelaxationApplied PhysicsEpitaxial LayersThin FilmsMolecular Beam EpitaxyEpitaxial GrowthIsland Formation

References

	Year	Citations

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