Photoluminescence in the amorphous system SiO<i>x</i>

Abstract

We report on the photoluminescence in the amorphous SiOx alloy system for x = 0–1.44. The films were produced by a glow discharge of suitable mixtures of SiH4 and N2O. We find two luminescence bands, one of which shifts to higher energy with increasing oxygen content in an analogous way as the optical-absorption edge.